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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB880 DESCRIPTION *High DC Current Gain: hFE = 2000(Min)@ IC= -2A *Wide Area of Safe Operation *Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A *Complement to Type 2SD1190 APPLICATIONS *Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25 w w scs .i w VALUE -70 -60 -6 -4 -6 30 1.75 150 -55~150 UNIT V .cn mi e V V A A PC Collector Power Dissipation Ta=25 Tj Tstg Junction Temperature Storage Temperature Range W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -50mA, RBE= MIN TYP. 2SB880 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA B -1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -2A, IB= -4mA B -2.0 V A Collector Cutoff Current VCB= -40V, IE= 0 -100 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain fT Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time Storage Time ww w scs .i IC= -2A; VCE= -2V IC= -2A; VCE= -5V .cn mi e 2000 -3 mA 20 MHz 0.5 s s s RL= 10, VCC -20V IC= -2A; IB1= -IB2= -4mA 1.4 Fall Time 1.2 isc Websitewww.iscsemi.cn |
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